Tl;DR
- Spin on resist
- Bake Resist
- Lithography of Contact Shape
- Develop the resist out
- “Ashing” resist residue
- p-contact metallisation (top)
- n-contact metallisation (bottom)
- Liftoff resist
- Anneal contacts
- Spin Resist
- Bake Resist
- Lithography of Mesa
- Develop non-mesa resist
- Wet Etch down to n-side
- Strip Resist
Start with a virgin wafer:
| Layer | Thickness |
|---|---|
| p+ GaAs Contact | 150nm |
| p-AlInGaP | 1200nm |
| QW Layer (InGaP) | 200nm |
| n-AlInGaP | 1200nm |
| n+ GaAs Substrate | 550um |
Spin on resist:
Bake Resist
Lithography
Develop Contact Resist
Ashing Resist Residue
p-contact metallisation
Ti/Au Alloy
n-contact metallisation
Ni/Au/Ge/Ni/Au Alloy
Liftoff Resist
Contact Annealing
Spin Resist
Bake Resist
Lithography of Mesa
Develop Resist
Wet Etch
Strip Resist
